HT Semiconductor 2sd1119 free download

File name 2sd1119.pdf

2SD1119 SOT-89 TRANSISTOR (NPN) FEATURES 1. BASE Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the low 2. COLLECTOR 1 voltage power supply. 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A PC Collector Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 7 V Collector cut-off current ICBO VCB=10V, IE=0 0.1 A Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A hFE(1) VCE=2V, IC=500mA 230 600 DC current gain hFE(2) VCE=2V, IC=2A 150 Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.1A 1 V Transition frequency fT VCE=6V, IC=50mA, f=200MHz 150 MHz Collector output capacitance Cob VCB=20V, f=1MHz 50 pF CLASSIFICATION OF hFE(1) Rank Q